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IRL3715ZPbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRL3715ZPbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRL3715ZPbF fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95581
IRL3715ZPbF
IRL3715ZSPbF
IRL3715ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 11m
7.0nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3715Z
D2Pak
IRL3715ZS
TO-262
IRL3715ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
fCase-to-Sink, Flat Greased Surface
Junction-to-Ambient
gJunction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
20
± 20
50 h
36 h
200
45
23
0.30
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
3.33
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/20/04

PagesPages 12
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