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LBC858CDW1T1G fiches techniques PDF

Leshan Radio Company - Dual General Purpose Transistors

Numéro de référence LBC858CDW1T1G
Description Dual General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBC858CDW1T1G fiche technique
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
Device Marking:
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
VCEO
VCBO
VEBO
IC
–65
–80
–5.0
–100
–45
–50
–5.0
–100
–30
–30
–5.0
–100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC85*BDW1T1G
LBC85*BDW1T3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
LBC85** DW1T1G
S-LBC85** DW1T1G
65 4
1
2
3
SOT-363
(3) (2) (1)
Q1
Q2
(4) (5)
(6)
DEVICE MARKING
See Table
Rev.O 1/6

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