|
|
PDF LBC857BDW1T1G Data sheet ( Hoja de datos )
| Número de pieza | LBC857BDW1T1G | |
| Descripción | Dual General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LBC857BDW1T1G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
• Device Marking:
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
VCEO
VCBO
VEBO
IC
–65
–80
–5.0
–100
–45
–50
–5.0
–100
–30
–30
–5.0
–100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC85*BDW1T1G
LBC85*BDW1T3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
LBC85** DW1T1G
S-LBC85** DW1T1G
65 4
1
2
3
SOT-363
(3) (2) (1)
Q1
Q2
(4) (5)
(6)
DEVICE MARKING
See Table
Rev.O 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0 1.0
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZθJA(t) = r(t) RθJA
RθJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
10 100 1.0Ăk
t, TIME (ms)
Figure 13. Thermal Response
10Ăk
100Ăk
1.0ĂM
-200
1 s 3 ms
-100
-50 TA = 25°C TJ = 25°C
BC558
-10
BC557
BC556
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
Rev.O 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LBC857BDW1T1G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LBC857BDW1T1G | Dual General Purpose Transistors | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |