PDF LBC846ADW1T1G Data sheet ( Hoja de datos )

Número de pieza	LBC846ADW1T1G
Descripción	Dual General Purpose Transistors
Fabricantes	Leshan Radio Company
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No Preview Available ! LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 54 LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G S-LBC846ADW1T1G S-LBC846BDW1T1G S-LBC847BDW1T1G S-LBC847CDW1T1G S-LBC848BDW1T1G S-LBC848CDW1T1G Q2 Q1 See Table 6 5 4 12 MAXIMUM RATINGS 3 Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous V CEO V CBO V EBO IC BC846 65 80 6.0 100 BC847 BC848 45 30 50 30 6.0 5.0 100 100 Unit V V V mAdc 1 2 3 SOT-363 /SC-88 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD R θJA T J , T stg Max Unit 380 mW 250 mW 3.0 328 –55 to +150 mW/°C °C/W °C ORDERING INFORMATION LBC846ADW1T1G LBC846ADW1T3G Device S-LBC846ADW1T1G S-LBC846ADW1T3G LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G S-LBC846BDW1T1G S-LBC846BDW1T3G S-LBC847BDW1T1G S-LBC847BDW1T3G S-LBC847CDW1T1G LBC847CDW1T3G S-LBC847CDW1T3G LBC848BDW1T1G S-LBC848BDW1T1G LBC848BDW1T3G S-LBC848BDW1T3G LBC848CDW1T1G LBC848CDW1T3G S-LBC848CDW1T1G S-LBC848CDW1T3G Marking 1A 1A 1B 1B 1F 1F 1G 1G 1K 1K 1L 1L Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel Rev.O 1/6 1 page LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series S-LBC846ADW1T1G Series 1.0 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0 SINGLE PULSE 1.0 P (pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) 10 100 1.0K 10K t, TIME (ms) Figure 11. Thermal Response 100K 1.0M -200 -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 12. Active Region Safe Operating Area The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 12 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 12. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limita- tions imposed by the secondary breakdown. Rev.O 5/6 5 Page

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