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Numéro de référence | FDB5800 | ||
Description | N-Channel Logic Level PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FDB5800
N-Channel Logic Level PowerTrench® MOSFET
60 V, 80 A, 6 mΩ
November 2013
Features
• RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A
• High Performance Trench Technology for Extermly
Low RDS(on)
• Low Gate Charge
• High Power and Current Handing Capability
• RoHs Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process
that has been tailored to minimize the on-state
resistance while maintaining superior switching
performance.
Applications
• Power tools
• Motor drives and Uninterruptible Power Supplies
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (TC < 102oC, VGS = 10 V)
- Continuous (TC < 90oC, VGS = 5 V)
- Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
- Pulsed
EAS Single Pulse Avalanche Energy
PD
- Power Dissipation
- Derate above 25oC
TJ, TSTG - Operating and Storage Temperature
(Note 1)
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263, Max.
Thermal Resistance Junction to Ambient TO-263, Max.
( Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
FDB5800
60
±20
80
80
14
Figure 4
652
242
1.61
-55 to 175
0.62
62.5
43
Unit
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2005 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
1
www.fairchildsemi.com
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Pages | Pages 7 | ||
Télécharger | [ FDB5800 ] |
No | Description détaillée | Fabricant |
FDB5800 | N-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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