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PDF 80N055 Data sheet ( Hoja de datos )
| Número de pieza | 80N055 | |
| Descripción | NP80N055 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
www.DataSheet4UT.rcaonmsistor designed for high current switching
applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2900 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
NP80N055CLE
NP80N055DLE
NP80N055ELE
PACKAGE
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
Drain Current (DC) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±80
±200
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note3
Single Avalanche Energy Note3
PT
IAS
EAS
120
45 / 30 / 10
2.0 / 90 / 100
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW ≤ 10 µs, Duty cycle ≤ 1 %
3. Starting Tch = 25 °C, RG = 25 Ω , VGS = 20 V→0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25 °C/W
Channel to Ambient
Rth(ch-A)
83.3 °C/W
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14097EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000
1 page  
NP80N055CLE, NP80N055DLE, NP80N055ELE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
24 Pulsed
20
VGS = 4.5 V
16
5V
10 V
12
8
4
www.DataSheet4U.com 0
ID = 40 A
−50 0 50 100 150
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
100
Coss
Crss
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100 VGS = 10 V
10
VGS = 0 V
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1
10 100
IF - Drain Current - A
1
0.1 1
10 100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
70 14
60
50 VDD = 44 V
28 V
40 11 V
12
VGS
10
8
30 6
20 4
VDS
10
2
ID = 80 A
00
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
Data Sheet D14097EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 80N055.PDF ] | |
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