|
|
PDF 2SC5840 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5840 | |
| Descripción | Silicon NPN epitaxial planar type Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC5840 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Power Transistors
2SC5840
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
■ Features
• High-speed switching (tstg: storage time/tf: fall time is short)
• Low collector-emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
80
5
3
5
15
2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5840
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
hFE3
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 80 V, IB = 0
VCE = 4 V, IC = 0.2 A
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.1 A, f = 10 MHz
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
80 V
100 µA
100 µA
50
80 280
20
0.7 V
100 MHz
0.2 µs
0.9 µs
0.15 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00297AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5840.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC5840 | Silicon NPN epitaxial planar type Power Transistors | Panasonic Semiconductor |
| 2SC5843 | NPN SiGe RF TRANSISTOR |  NEC |
| 2SC5845 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
| 2SC5848 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |