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Número de pieza | D1592 | |
Descripción | NPN Transistor - 2SD1592 | |
Fabricantes | NEC | |
Logotipo | ||
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DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1592
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
FEATURES
• High DC current gain due to Darlington connection
• Low collector saturation
• Reverse deterrence type
• Ideal for use in devices such as pulse motor drivers and relay
drivers of PC terminals, and ignitors of general-purpose engines.
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
Ratings
500
+300, −10
10
5.0
10
0.5
30
1.5
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16137EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet D1592.PDF ] |
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