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Numéro de référence | C2715 | ||
Description | Silicon Epitaxial Planar Transistor | ||
Fabricant | Galaxy Microelectronics | ||
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1 Page
Silicon Epitaxial Planar Transistor
FEATURES
z High power gain
z Recommended for FM IF,OSC stage
and AM CONV.IF stage
Pb
Lead-free
APPLICATIONS
z High Frequency Amplifier Applications
Production specification
2SC2715
ORDERING INFORMATION
Type No.
Marking
2SC2715
RR1/RO1/RY1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
4
IC Collector Current -Continuous
50
IB Base current
10
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +125
Units
V
V
V
mA
mA
mW
℃
C099
Rev.A
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Pages | Pages 3 | ||
Télécharger | [ C2715 ] |
No | Description détaillée | Fabricant |
C2710 | NPN Transistor - 2SC2710 | Toshiba |
C2712 | NPN Transistor - 2SC2712 | Weitron Technology |
C2712 | NPN EPITAXIAL SILICON TRANSISTOR | WEJ |
C2713 | NPN Transistor - 2SC2713 | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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