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Galaxy Microelectronics - Silicon Epitaxial Planar Transistor

Numéro de référence C2715
Description Silicon Epitaxial Planar Transistor
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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C2715 fiche technique
Silicon Epitaxial Planar Transistor
FEATURES
z High power gain
z Recommended for FM IF,OSC stage
and AM CONV.IF stage
Pb
Lead-free
APPLICATIONS
z High Frequency Amplifier Applications
Production specification
2SC2715
ORDERING INFORMATION
Type No.
Marking
2SC2715
RR1/RO1/RY1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
4
IC Collector Current -Continuous
50
IB Base current
10
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +125
Units
V
V
V
mA
mA
mW
C099
Rev.A
www.gmicroelec.com
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