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Numéro de référence | L2SA1037AKQLT1G | ||
Description | General Purpose Transistors | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Features
z We declare that the material of product compliance with RoHS requirements.
zS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
ORDERING INFORMATION
3
Device
L2SA1037AKQLT1G
S-L2SA1037AKQLT1G
L2SA1037AKQLT3G
S-L2SA1037AKQLT3G
Package
SOT23
SOT23
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SOT– 23
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
V CEO
V CBO
–50
–60
V
V
Emitter–Base Voltage
V EBO
–6.0
V
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
IC
PC
Tj
T stg
–150
mAdc
0.2 W
150 °C
-55 ~+150 °C
DEVICE MARKING
1
BASE
L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio
(V CE = – 6 V, I C= –1mA)
Transition frequency
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = – 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
– 50
–6
– 60
—
—
—
120
—
—
Typ Max Unit
— —V
— —V
— —V
— – 0.1 µA
— – 0.1 µA
— -0.5 V
–– 560 ––
140 –– MHz
4.0 5.0 pF
3
COLLECTOR
2
EMITTER
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
Rev.O 1/4
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Pages | Pages 4 | ||
Télécharger | [ L2SA1037AKQLT1G ] |
No | Description détaillée | Fabricant |
L2SA1037AKQLT1 | General Purpose Transistors | Leshan Radio Company |
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