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L2SC2411KRLT1 fiches techniques PDF

Leshan Radio Company - Medium Power Transistor NPN silicon

Numéro de référence L2SC2411KRLT1
Description Medium Power Transistor NPN silicon
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L2SC2411KRLT1 fiche technique
LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
NPN silicon
FEATURE
ƽEpitaxial planar type
ƽComplementary to L2SA1036K
www.DataSheet4U.ƽcoPmb-Free package is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC2411KPLT1
CP
3000/Tape&Reel
L2SC2411KPLT1G
(Pb-Free)
CP
3000/Tape&Reel
L2SC2411KQLT1
CQ
3000/Tape&Reel
L2SC2411KQLT1G
(Pb-Free)
CQ
3000/Tape&Reel
L2SC2411KRLT1
CR
3000/Tape&Reel
L2SC2411KRLT1G
(Pb-Free)
CR
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
-55~+150
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Min.
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltgae
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collcetor-emitter saturation voltage
Transition frequency
Output capacitance
hFE values are classified as follows:
Item P Q R
hFE
82~180 120~270 180~390
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
40
32
5
-
-
82
-
-
-
-
-
-
-
-
-
-
250
6.0
Unit
V
V
V
A*
W
°C
°C
Max.
-
-
-
1
1
390
0.4
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
L2SC2411K*LT1
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=20V
VEB=4V
VCE=3V
IC/IB=500mA/50mA
VCE=5V,IE=-20mA,f=100MHz
VCB=10V,IE=0A,f=1MHz
L2SC2411K*LT1-1/4

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