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PDF FDS86242 Data sheet ( Hoja de datos )

Número de pieza FDS86242
Descripción N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDS86242 Hoja de datos, Descripción, Manual

August 2010
FDS86242
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
General Description
„ Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
„ Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
„ High performance trench technology for extremely low rDS(on)
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures and VRMs
„ Primary Switch for 24V and 48V Systems
„ High Voltage Synchronous Rectifier
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
150
±20
4.1
20
40
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS86242
Device
FDS86242
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
1
www.fairchildsemi.com

1 page




FDS86242 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
0.001
0.000510-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
5
www.fairchildsemi.com

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