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PDF IRFH7440PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH7440PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
StrongIRFET
IRFH7440PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.8mΩ
2.4mΩ
c159A
85A
PQFN 5X6 mm
Base Part Number Package Type
IRFH7440PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable Part Number
Note
IRFH7440TRPBF
IRFH7440TR2PBF
EOL notice #259
6.0
ID = 50A
5.0
4.0
TJ = 125°C
3.0
2.0
TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
200
150 Limited By Package
100
50
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
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July 7, 2015
1 page  
IRFH7440PbF
1000
100 TJ = 150°C
10 TJ = 25°C
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
50
Id = 1.0mA
2.5
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
40
30
20
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10 Limited by
package 10msec
1 Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-5 0 5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
10
0
0 100 200 300 400 500
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2015 International Rectifier
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July 7, 2015
5 Page 
IRFH7440PbF
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
Indus trial
(per JE DE C JE S D47F guidelines )††
PQFN 5mm x 6mm
MS L1
(per JE DE C J-S TD-020D†† )
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
1/13/2014
Comment
• Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
• Updated data sheet with the new IR corporate template.
2/19/2015
6/2/2015
7/7/2015
• Updated EAS (L =1mH) = 232mJ on page 2
• Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 22A, VGS =10V”. on page 2
• Updated package outline for “option E” and added package outline for “option G” on page 9.
• Updated "IFX" logo on page 1 & 11.
• Updated tape and reel on page 10.
• Corrected package outline for “option E” on page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2015 International Rectifier
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July 7, 2015
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRFH7440PBF.PDF ] | |
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