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IRFIZ46NPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFIZ46NPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFIZ46NPBF fiche technique
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt Ġ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient
PD - 95595
IRFIZ46NPbF
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 0.020
S ID = 33A
TO-220 FULLPAK
Max.
33
23
180
45
0.3
±20
230
16
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
65
Units
°C/W
1
07/23/04

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