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FDPF680N10T fiches techniques PDF

Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDPF680N10T
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDPF680N10T fiche technique
November 2013
FDPF680N10T
N-Channel PowerTrench® MOSFET
100 V, 12 A, 68 mΩ
Features
• RDS(on) = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Consumer Appliances
• LCD/LED/PDP TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDPF680N10T
100
±20
12
7.6
48
50.4
13.0
24
0.19
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF680N10T
5.2
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
FDPF680N10T Rev. C5
1
www.fairchildsemi.com

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