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FRF10A60 fiches techniques PDF

Thinki Semiconductor - 10.0 Ampere Insulated Full-pak Common Anode Fast Recovery Rectifier

Numéro de référence FRF10A60
Description 10.0 Ampere Insulated Full-pak Common Anode Fast Recovery Rectifier
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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FRF10A60 fiche technique
FRF10A20 thru FRF10A60
®
FRF10A20 thru FRF10A60
Pb Free Plating Product
Pb
10.0 Ampere Insulated Full-pak Common Anode Fast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case:Fully molded isolation TO-220FH
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Positive
Negative
* *Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "FCF"
Suffix "FRF"
* Available for Mass Production
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL FRF10A20 FRF10A40 FRF10A60 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
200
140
200
0.98
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
400
280
400
10.0
100
1.3
10.0
250
35
65
2.2
-55 to +150
600 V
420 V
600 V
A
A
1.7 V
uA
uA
nS
pF
oCW
oC
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/

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