|
|
PDF L2SD2114KVLT3G Data sheet ( Hoja de datos )
| Número de pieza | L2SD2114KVLT3G | |
| Descripción | NPN silicon transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de L2SD2114KVLT3G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures
1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
1
2
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
−55∼+150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
25
20
12
−
−
−
−
−
−
−
−
0.18
−
−
−
0.5
0.5
0.4
V IC=10µA
V IC=1mA
V IE=10µA
µA VCB=20V
µA VEB=10V
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
∗ Measured using pulse current
hFE 820 − 2700 − VCE=3V, IC=10mA
fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz
Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz
Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
L2SD2114KVLT1G
S-L2SD2114KVLT1G
hFE
820~1800
Marking
BV
Shipping
3000/Tape&Reel
L2SD2114KVLT3G
S-L2SD2114KVLT3G
820~1800
BV 10000/Tape&Reel
L2SD2114KWLT1G
S-L2SD2114KWLT1G
L2SD2114KWLT3G
S-L2SD2114KWLT3G
1200~2700
1200~2700
BW 3000/Tape&Reel
BW 10000/Tape&Reel
Rev.O 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L2SD2114KVLT3G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| L2SD2114KVLT3G | NPN silicon transistor | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |