|
|
PDF L2SD2114KVLT1G Data sheet ( Hoja de datos )
| Número de pieza | L2SD2114KVLT1G | |
| Descripción | Epitaxial planar type NPN silicon transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de L2SD2114KVLT1G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
www.DataSheet4U.com3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
4) Pb-Free package is available.
L2SD2114K*LT1
3
1
2
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
−55∼+150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol Min. Typ. Max. Unit
Conditions
BVCBO 25
−
−
V IC=10µA
BVCEO 20
−
−
V IC=1mA
BVEBO 12
−
−
V IE=10µA
ICBO
−
− 0.5 µA VCB=20V
IEBO
−
− 0.5 µA VEB=10V
VCE(sat)
−
0.18 0.4
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
∗ Measured using pulse current
hFE 820 − 2700 − VCE=3V, IC=10mA
fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz
Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz
Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
hFE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV 3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW 3000/Tape&Reel
L2SD2114KWLT1G
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
L2SD2114K*LT1–1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L2SD2114KVLT1G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor | Leshan Radio Company |
| L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |