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Numéro de référence | L9014RLT3G | ||
Description | General Purpose Transistors | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
S-L9014QLT1G
Marking
14Q
Shipping
3000/Tape&Reel
L9014QLT3G S-L9014QLT3G
14Q
10000/Tape&Reel
L9014RLT1G S-L9014RLT1G 14R
3000/Tape&Reel
L9014RLT3G S-L9014RLT3G 14R
10000/Tape&Reel
L9014SLT1G S-L9014SLT1G 14S
3000/Tape&Reel
L9014SLT3G S-L9014SLT3G 14S
10000/Tape&Reel
L9014TLT1G S-L9014TLT1G 14T
3000/Tape&Reel
L9014TLT3G S-L9014TLT3G 14T
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5
100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
PD
225 mW
1.8 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
556 o C/W
Total Device Dissipation
PD
Alumina Substrate, (2) TA=25 oC
300 mW
Derate above 25oC
2.4 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
417 oC /W
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TJ ,Tstg
-55 to +150 o C
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4
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Pages | Pages 4 | ||
Télécharger | [ L9014RLT3G ] |
No | Description détaillée | Fabricant |
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