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PDF L2SC3838LT3G Data sheet ( Hoja de datos )
| Número de pieza | L2SC3838LT3G | |
| Descripción | High-Frequency Amplifier Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High transition frequency.(Typ.fT=3.2GHz)
2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF.
4.We declare that the material of product compliance with RoHS requirements.
5.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
20
Collector-Emitter Voltage
VCEO
11
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.2
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
Unit
V
V
V
mA
W
°C
°C
DEVICE MARKING
L2SC3838LT1G;S-L2SC3838LT1G=AD
z ORDERING INFORMATION
Device
L2SC3838LT1G
S-L2SC3838LT1G
L2SC3838LT3G
S-L2SC3838LT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
L2SC3838LT1G
S-L2SC3838LT1G
3
1
2
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
20
11
3
-
-
-
56
1.4
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF -
Typ Max. Unit Conditions
- - V IC=10µA
- - V IC=1mA
- - V IE=10µA
- 0.5 µA VCB=10V
- 0.5 µA VEB= 2 V
- 0.5 V IC/IB=10mA/5mA
- 180 - VCE/IC=10V/5mA
3.2 - GHz VCE=10V, IE=-10mA, f=500MHz
0.8 1.5 pF VCB=10V, IE=0A, f=1MHz
4 12 ps VCB=10V, IC=10mA, f=31.8MHz
3.5 - dB VCE=6V, IC=2mA, f=500MHz,Rg=50Ω
Rev.O 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet L2SC3838LT3G.PDF ] | |
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