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Leshan Radio Company - High-Frequency Amplifier Transistor

Numéro de référence L2SC3837LT3G
Description High-Frequency Amplifier Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L2SC3837LT3G fiche technique
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High transition frequency.(Typ.fT=1.5GHz)
2.Small rbb`Cc and high gain.(Typ.6ps)
3.Small NF.
4.We declare that the material of product compliance with RoHS requirements.
5.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
18
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.2
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
Unit
V
V
V
mA
W
°C
°C
DEVICE MARKING
L2SC3837LT1G;S-L2SC3837LT1G=AP
z ORDERING INFORMATION
Device
L2SC3837LT1G
S-L2SC3837LT1G
L2SC3837LT3G
S-L2SC3837LT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
L2SC3837LT1G
S-L2SC3837LT1G
3
1
2
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
30
18
3
-
-
-
56
600
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF -
Typ
-
-
-
-
-
-
-
1500
0.9
6
4.5
Max.
-
-
-
0.5
0.5
0.5
180
-
1.5
13
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
ps
dB
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=10V
VEB= 2 V
IC/IB=20mA/4mA
VCE/IC=10V/10mA
VCB=10V, IC=10mA, f=200MHz
VCB=10V, IE=0A, f=1MHz
VCB=10V, IC=10mA, f=31.8MHz
VCE=12V, IC=2mA, f=200MHz,Rg=50
Rev.O 1/2

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