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Leshan Radio Company - General Purpose Transistors

Numéro de référence LBC848BLT1G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBC848BLT1G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC846ALT1G
Series
S-LBC846ALT1G
Series
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCEO
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCBO
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VEBO
Collector Current – Continuous
THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1.)
RqJA
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2.)
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
12
xx= Device Marking
(See Table Below)
Rev.A 1/13

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