LBC807-25LT3G Datasheet PDF - Leshan Radio Company
| Part Number | LBC807-25LT3G | |
| Description | General Purpose Transistors | |
| Manufacturers | Leshan Radio Company | |
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There is a preview and LBC807-25LT3G download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
S-LBC807-16LT1G
S-LBC807-25LT1G
S-LBC807-40LT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-16LT1G
5A1 3000/Tape&Reel
LBC807-16LT3G
5A1 10000/Tape&Reel
LBC807-25LT1G
5B1 3000/Tape&Reel
LBC807-25LT3G
5B1 10000/Tape&Reel
LBC807-40LT1G
5C1 3000/Tape&Reel
LBC807-40LT3G
5C1 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Rev.O 1/10
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500
150°C
400
300 25°C
200
−55°C
100
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS − LBC807−25LT1G
VCE = 1 V
1
IC/IB = 10
150°C
25°C
0.1 −55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
0.8
0.7
−55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
Rev.O 5/10
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for LBC807-25LT3G electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ LBC807-25LT3G.PDF Datasheet ] | |
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