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Renesas - MOS FIELD EFFECT TRANSISTOR

Numéro de référence NP23N06YDG
Description MOS FIELD EFFECT TRANSISTOR
Fabricant Renesas 
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NP23N06YDG fiche technique
NP23N06YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0014EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
Ordering Information
Part No.
NP23N06YDG -E1-AY 1
NP23N06YDG -E2-AY 1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) 2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 3
Repetitive Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
60
±20
±23
±46
60
1.0
175
55 to +175
11
12
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C) 2.5 °C/W
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
150
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) 150°C, RG = 25 Ω
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
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