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UPA2735GR fiches techniques PDF

Renesas - P-channel MOSFET

Numéro de référence UPA2735GR
Description P-channel MOSFET
Fabricant Renesas 
Logo Renesas 





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UPA2735GR fiche technique
Data Sheet
μPA2735GR
P-channel MOSFET
–30 V, –16 A, 5.0 mΩ
R07DS0867EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 16 A)
4.5 V Gate-drive available
Small and surface mount package (Power SOP8)
Pb-free and Halogen free
Power SOP8
Ordering Information
Part No.
μ PA2735GR-E1-AT
μ PA2735GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
30
m20
m16
m150
1.1
2.5
150
55 to +150
16
25.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
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