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PDF IRF8113GPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF8113GPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
l Halogen-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
PD - 96251
IRF8113GPbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg Typ.
:5.6m @VGS = 10V 24nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through
are on page 10
www.irf.com
1
07/09/09
1 page  
IRF8113GPbF
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
2.2
2.0
1.8
ID = 250µA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.924
13.395
τi (sec)
0.000228
0.1728
τ3 τ3
τ4 τ4
22.046 1.5543
14.911 22.5
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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