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PDF NP20P04SLG Data sheet ( Hoja de datos )
| Número de pieza | NP20P04SLG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP20P04SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP20P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP20P04SLG-E1-AY Note
NP20P04SLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
FEATURES
• Super low on-state resistance
RDS(on)1 = 25 mΩ MAX. (VGS = −10 V, ID = −10 A)
RDS(on)2 = 38 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
• Low input capacitance
Ciss = 1650 pF TYP.
• Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
−40
m20
m20
m60
38
1.2
175
−55 to +175
20
40
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
<R> 2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.9
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19075EJ2V0DS00 (2nd edition)
Date Published March 2008 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
40 VGS = −4.5 V
30
20 −10 V
10
0
-75
ID = −10 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
10
1
-0.1
td(on)
tr VDD = −20 V
VGS = −10 V
RG = 0 Ω
-1 -10 -100
ID - Drain Current - A
-100
-10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = −10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
NP20P04SLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40 -12
-30
-20
-10
0
0
VDD = −32 V
−20 V
−8 V
-9
-6
VGS
VDS
10 20
-3
ID = −20 A
0
30 40
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1 -1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19075EJ2V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NP20P04SLG.PDF ] | |
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