DataSheetWiki


2SB989 fiches techniques PDF

INCHANGE - Silicon PNP Power Transistor

Numéro de référence 2SB989
Description Silicon PNP Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





1 Page

No Preview Available !





2SB989 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
·Complement to Type 2SD1352
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-0.4 A
30 W
150
-55~150
isc websitewww.iscsemi.cn
1

PagesPages 2
Télécharger [ 2SB989 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SB980 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SB983 Silicon Power Transistor SHINDENGEN
SHINDENGEN
2SB984 PNP SIlicon Transistor NEC
NEC
2SB985 Large-Current Driving Applications Sanyo Semicon Device
Sanyo Semicon Device

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche