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Numéro de référence | 2SB989 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | INCHANGE | ||
Logo | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
·Complement to Type 2SD1352
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
-0.4 A
30 W
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SB989 ] |
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