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PDF L2SD1781KQLT3G Data sheet ( Hoja de datos )
| Número de pieza | L2SD1781KQLT3G | |
| Descripción | Medium Power Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de L2SD1781KQLT3G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
(32V, 0.8A)
L2SD1781KQLT1G
L2SD1781KQLT1G Series
S-L2SD1781KQLT1G Series
FFeatures
1) Very low VCE(sat).
VCE(sat) t 0.4 V (Typ.)
(IC / IB = 500mA / 50mA)
2) High current capacity in compact
package.
3) Complements the L2SB1197KXLT1G
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1
2
SOT-23 /TO-236AB
FStructure
Epitaxial planar type
NPN silicon transistor
FAbsolute maximum ratings (Ta = 25_C)
COLLECTOR
3
1
BASE
2
EMITTER
ORDERING INFORMATION
Device
L2SD1781KQLT1G
S-L2SD1781KQLT1G
L2SD1781KQLT3G
S-L2SD1781KQLT3G
L2SD1781KRLT1G
S-L2SD1781KRLT1G
L2SD1781KRLT3G
S-L2SD1781KRLT3G
Marking
Shipping
AFQ 3000 Tape & Reel
AFQ 10000 Tape & Reel
AFR 3000 Tape & Reel
AFR 10000 Tape & Reel
Rev.O 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L2SD1781KQLT3G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| L2SD1781KQLT3G | Medium Power Transistor | Leshan Radio Company |
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