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L2SA812SLT3G fiches techniques PDF

Leshan Radio Company - General Purpose Transistors

Numéro de référence L2SA812SLT3G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L2SA812SLT3G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
S-L2SA812QLT1G Series
ƽNPN complement: L2SC1623
ƽWe declare that the material of product compliance with RoHS requirements.
3
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
DEVICE MARKING AND ORDERING INFORMATION
2
Device
Marking
L2SA812QLT1G
S-L2SA812QLT1G
M8
L2SA812QLT3G
S-L2SA812QLT3G
L2SA812RLT1G
S-L2SA812RLT1G
L2SA812RLT3G
S-L2SA812RLT3G
L2SA812SLT1G
S-L2SA812SLT1G
L2SA812SLT3G
S-L2SA812SLT3G
M8
M6
M6
M7
M7
MAXIMUM RATINGS
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Rating
Collector-Emitter Voltage
Symbol
VCEO
L2SA812
-50
Unit
V
Collector-Base Voltage
Emitter-Base Voltage
VCBO -60 V
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
Tj ,Tstg
Max
200
1.8
556
200
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
Rev.O 1/5

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