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Numéro de référence | LBC817-25WT1G | ||
Description | General Purpose Transistors | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
●FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION
Device
LBC817-25WT1G
LBC817-25WT3G
Marking
6B
6B
Shipping
3000/Tape&Reel
10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
45
50
5.0
500
LBC817-25WT1G
S-LBC817-25WT1G
3
Unit
Vdc
Vdc
Vdc
mAdc
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
●THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation FR-5
PD
Board,(Note 1.)@Ta = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
RθJA
Total Power Dissipation Alumina PD
Substrate,(Note 2.)@Ta = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Limits
150
1.2
833
200
1.6
625
–55 to +150
Unit
mW
°C/W
°C/W
mW
°C/W
°C/W
°C
July , 2015
Rev .A 1/5
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Pages | Pages 5 | ||
Télécharger | [ LBC817-25WT1G ] |
No | Description détaillée | Fabricant |
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