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L2SA812SLT1G fiches techniques PDF

Leshan Radio Company - General Purpose Transistors

Numéro de référence L2SA812SLT1G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L2SA812SLT1G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
ƽPb-Free Package is available.
www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA812QLT1
M8
3000/Tape&Reel
L2SA812QLT1G
L2SA812RLT1
M8
(Pb-Free)
M6
3000/Tape&Reel
3000/Tape&Reel
L2SA812RLT1G
L2SA812SLT1
M6
(Pb-Free)
M7
3000/Tape&Reel
3000/Tape&Reel
L2SA812SLT1G
M7
(Pb-Free)
MAXIMUM RATINGS
3000/Tape&Reel
Rating
Symbol
L2SA812
Unit
Collector-Emitter Voltage
VCEO -50 V
Collector-Base Voltage
VCBO -60 V
Emitter-Base Voltage
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
Max
200
1.8
556
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
PD
R θJA
Tj ,Tstg
200
2.4
417
-55 to +150
L2SA812*LT1
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SA812-1/5

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