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L2SC1623QLT1G fiches techniques PDF

Leshan Radio Company - General Purpose Transistors

Numéro de référence L2SC1623QLT1G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L2SC1623QLT1G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = 50 V.
ƽEpitaxial planar type.
ƽPNP complement: L2SA812
www.DataSheet4U.coƽmPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC1623QLT1
L2SC1623QLT1G
L2SC1623RLT1
L2SC1623RLT1G
L2SC1623SLT1
L2SC1623SLT1G
L5
L5
(Pb-Free)
L6
L6
(Pb-Free)
L7
L7
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO 50 V
VCBO 60 V
VEBO 7 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
150 mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SC1623*LT1
3
1
2
SOT– 23
1
BASE
3
COLLECTOR
2
EMITTER
L2SC1623-1/5

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