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PDF IRF7241PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7241PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7241PbF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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● Trench Technology
● Ultra Low On-Resistance
● P-Channel MOSFET
● Available in Tape & Reel
● Lead-Free
VDSS
-40V
PD - 95294
IRF7241PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
41@VGS = -10V
70@VGS = -4.5V
ID
-6.2A
-5.0A
Description
S1
8
A
D
New trench HEXFET® Power MOSFETs from S 2
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance S 3
7D
6D
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
G
4
5D
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
Top View
in battery and load management applications.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/6/04
1 page  
IRF7241PbF
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7241PbF.PDF ] | |
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