PDF LBC857CWT1G Data sheet ( Hoja de datos )

Número de pieza	LBC857CWT1G
Descripción	General Purpose Transistors
Fabricantes	Leshan Radio Company
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No Preview Available ! LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage V CEO V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G 3 1 2 SOT– 323 / SC-70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 1 BASE DEVICE MARKING S-LBC856AWT1G= 3A; S-LBC856BWT1G= 3B;S-LBC857AWT1G= 3E; S-LBC857BWT1G = 3F; S-LBC857CWT1G= 3G;S-LBC858AWT1G= 3J; S-LBC858BWT1G= 3K;S-LBC858CWT1G= 3L 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857B Only LBC858 Series Collector–Base Breakdown Voltage (IC = – 10 µA) LBC856 Series LBC857 Series LBC858 Series Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in – 65 — — V (BR)CEO – 45 — — v – 30 — — – 80 — — V (BR)CES – 50 — —v – 30 — — – 80 — — V (BR)CBO – 50 — — v – 30 — — – 5.0 — — V (BR)EBO – 5.0 — — v – 5.0 — — I CBO — — – 15 nA — — – 4.0 µA Rev.O 1/6 1 page LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G 1.0 0.7 D=0.5 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 0.01 0.1 0.2 0.5 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) 1.0 2.0 5.0 10 20 50 100 t, TIME (ms) Figure 13. Thermal Response 200 500 1.0k 2.0k 5.0k 10k –200 –100 –50 –10 –5.0 –2.0 –1.0 1s 3 ms TA= 25°C TJ= 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcu- lated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the sec- ondary breakdown. –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area Rev.O 5/6 5 Page

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