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LBC849BWT3G fiches techniques PDF

Leshan Radio Company - General Purpose Transistors

Numéro de référence LBC849BWT3G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBC849BWT3G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCEO
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCBO
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VEBO
Collector Current – Continuous
THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1.)
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Max
150
2.4
833
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
LBC846AWT1G
Series
3
1
2
SOT–323 /SC–70
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
xx= Device Marking
(See Table Below)
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