|
|
Numéro de référence | LBC848BWT1G | ||
Description | General Purpose Transistors | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION ( Pb– Free )
Device
LBC846AWT1G
S-LBC846AWT1G
LBC846AWT3G
S-LBC846AWT3G
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
S-LBC846AWT1G,BWT1G
S-LBC847AWT1G,BWT1G
CWT1G
S-LBC848AWT1G,BWT1G
CWT1G
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
3
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max Unit
150 mW
833
–55 to +150
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(IC = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
Typ Max Unit
——
— —v
——
——
— —v
——
——
— —v
——
——
— —v
——
— 15 nA
— 5.0 µA
Rev.O 1/9
|
|||
Pages | Pages 9 | ||
Télécharger | [ LBC848BWT1G ] |
No | Description détaillée | Fabricant |
LBC848BWT1 | (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon | Leshan Radio Company |
LBC848BWT1G | General Purpose Transistors | Leshan Radio Company |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |