LBC847BWT1G Datasheet PDF - Leshan Radio Company
| Part Number | LBC847BWT1G | |
| Description | General Purpose Transistors | |
| Manufacturers | Leshan Radio Company | |
| Logo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION ( Pb– Free )
Device
LBC846AWT1G
S-LBC846AWT1G
LBC846AWT3G
S-LBC846AWT3G
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
S-LBC846AWT1G,BWT1G
S-LBC847AWT1G,BWT1G
CWT1G
S-LBC848AWT1G,BWT1G
CWT1G
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
3
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max Unit
150 mW
833
–55 to +150
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(IC = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
Typ Max Unit
——
— —v
——
——
— —v
——
——
— —v
——
——
— —v
——
— 15 nA
— 5.0 µA
Rev.O 1/9
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LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G
LBC847B, LBC848B
600
500 150°C
VCE = 1 V
0.30
0.25
IC/IB = 20
150°C
400
25°C
300
0.20
25°C
0.15
200 −55°C
100
0.10
−55°C
0.05
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 17. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 20
0.9
0.8
0.7
0.6
−55°C
25°C
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 20. Base Emitter Voltage vs. Collector
Current
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10
Figure 21. Collector Saturation Region
20
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
Rev.O 5/9
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for LBC847BWT1G electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ LBC847BWT1G.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| LBC847BWT1 | The function is (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon. Leshan Radio Company | |
| LBC847BWT1G | The function is General Purpose Transistors. Leshan Radio Company | |
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