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Mitsubishi Electric Semiconductor - HIGH-SPEED SWITCHING USE

Numéro de référence FS5ASJ-06
Description HIGH-SPEED SWITCHING USE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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FS5ASJ-06 fiche technique
FS5ASJ-06
MITSUBISHI Nch POWER MOSFET
FS5ASJ-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
r
Dimensions in mm
0.5 ± 0.1
¡4V DRIVE
¡VDSS ................................................................................. 60V
¡rDS (ON) (MAX) ............................................................. 0.14
¡ID ........................................................................................... 5A
¡Integrated Fast Recovery Diode (TYP.) ............ 45ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1.0
0.9MAX.
2.3 2.3
A
0.5 ± 0.2
0.8
qwe
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
60
±20
5
20
5
5
20
20
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999

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