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Numéro de référence | FS50VSJ-2 | ||
Description | HIGH-SPEED SWITCHING USE | ||
Fabricant | Mitsubishi Electric Semiconductor | ||
Logo | |||
1 Page
FS50VSJ-2
MITSUBISHI Nch POWER MOSFET
FS50VSJ-2
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r 10.5MAX.
Dimensions in mm
4.5
1.3
0
+0.3
–0
1
B5 0.5
0.8
¡4V DRIVE
¡VDSS ................................................................................ 100V
¡rDS (ON) (MAX) .............................................................. 48mΩ
¡ID ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.) ............. 90ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
qwe
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 50µH
Typical value
Conditions
Ratings
100
±20
50
200
50
50
200
70
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
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Pages | Pages 4 | ||
Télécharger | [ FS50VSJ-2 ] |
No | Description détaillée | Fabricant |
FS50VSJ-03 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FS50VSJ-03 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FS50VSJ-06 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FS50VSJ-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
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