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Datasheet FS50VS-06-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
FS5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FS50 | LINEAR HALL-EFFECT SENSORS FEELING TECHNOLOGY
LINEAR HALL-EFFECT SENSORS
Features
Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in SIP-3L package
FS50
Pb Free
General Description
The FS50 Hall-effect sensors accurately track extremely small changes in magnetic flux density-chan  Feeling Technology sensor | | |
| 2 | FS50AS-03 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FS3UM-18A
HIGH-SPEED SWITCHING USE
FS3UM-18A
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS .....................................  Mitsubishi Electric Semiconductor mosfet | | |
| 3 | FS50AS-03 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
FS3UM-9
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ........................................  Powerex Power Semiconductors mosfet | | |
| 4 | FS50ASJ-03 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FS3VS-10
HIGH-SPEED SWITCHING USE
FS3VS-10
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS ........................................................ Mitsubishi Electric Semiconductor mosfet | | |
| 5 | FS50ASJ-03 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FS3VS-16A
HIGH-SPEED SWITCHING USE
FS3VS-16A
OUTLINE DRAWING
r
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
1.5MAX.
10.5MAX.
0 –0
+0.3
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS ..................................................... Powerex Power Semiconductors mosfet | | |
| 6 | FS50ASJ-03F | N-channel Power MOS FET FS50ASJ-03F
High-Speed Switching Use Nch Power MOS FET
Features
• Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)
2, 4
4
12 3
1
 Renesas data | | |
| 7 | FS50KM-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FS3VS-18A
HIGH-SPEED SWITCHING USE
FS3VS-18A
OUTLINE DRAWING
r
Dimensions in mm 4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
1.5MAX.
10.5MAX.
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS ..................................................... Mitsubishi Electric Semiconductor mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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