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PDF DDTC144ELP Data sheet ( Hoja de datos )
| Número de pieza | DDTC144ELP | |
| Descripción | SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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DDTC144ELP
PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DDTA144ELP)
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
3 2E
C R1 R2
1B
DFN1006-3
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
IN
1
R1
R2
• Terminal Connections: Collector Dot - See Marking Information
• Terminals: Finish — NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
B
C
OUT
3 (or -supply)
IN B
E
2
+ Supply
or GND
• Marking Code N6, Dot denotes Collector Side
Schematic and Pin Configuration
• Ordering Information: See Page 3
• Weight: 0.001 grams (approximate)
13
E
C OUT
(or -supply)
GND (or +supply)
Equivalent Inverter Circuit
Component P/N
DDTC144ELP
R1(NOM)
47K
R2(NOM)
47K
Maximum Ratings @TA = 25°C unless otherwise specified
Supply Voltage
Input Voltage
Output Current
Characteristic
Symbol
VCC
VIN
IC(max)
Value
50
-10 to +40
100
Unit
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Power Deration above 25°C
Thermal Resistance, Junction to Ambient Air (Note 3)
Operation and Storage Temperature Range
Symbol
PD
Pder
RθJA
Tj, TSTG
Value
250
2
500
-55 to +150
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cut Off Current
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency*
* Characteristics of transistor only.
Symbol
Min
Typ
Max Unit
Test Condition
V(BR)CBO
50
⎯
⎯
V IC = 10μA, IE = 0
V(BR)CEO
50
⎯
⎯
V IC = 1.0mA, IBB = 0
ICBO ⎯ ⎯ 0.5 μA VCB = 50V, IE = 0
VI(OFF) ⎯ 1.2 0.5 V VCE = 5V, IO = 100μA
VI(ON)
3 1.6 ⎯
VO = 0.3V, IO = 2mA
VO(ON) ⎯ ⎯ 0.3 V IO/II = 10mA/0.5mA
II
⎯
⎯
0.18
mA VI = 5V
IO(OFF) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V
G1 68 ⎯ ⎯ ⎯ VO = 5V, IO = 5mA
R1 32.9 47 61.1 kΩ
⎯
R2/R1 0.8 1 1.2 ⎯
⎯
fT ⎯ 250 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”; pad layout as shown on page 3 or Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31245 Rev. 2 - 2
1 of 3
www.diodes.com
DDTC144ELP
© Diodes Incorporated
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