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PDF BC338 Data sheet ( Hoja de datos )
| Número de pieza | BC338 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : IC=800mA.
DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).
For Complementary with PNP type BC328.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
30
25
5
800
-800
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
BC338
EPITAXIAL PLANAR NPN TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
hFE
VCE(sat)
VBE(ON)
fT
VCB=25V, IE=0
VCE=1V, IC=100mA
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=5V, IC=-10mA, f=100MHz
Collector Output Capacitance
Cob VCB=10V, f=1MHz, IE=0
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
MIN.
-
100
-
-
-
-
TYP.
-
-
-
-
100
12
MAX.
100
630
0.7
1.2
-
-
UNIT
nA
V
V
MHz
pF
2000. 2. 28
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC338.PDF ] | |
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