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PDF FQU4N50TU_WS Data sheet ( Hoja de datos )
| Número de pieza | FQU4N50TU_WS | |
| Descripción | N-Channel QFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQU4N50TU_WS
N-Channel QFET® MOSFET
500 V, 2.6 A, 2.7 Ω
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V,
ID = 1.3 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 6.0 pF)
• 100% Avalanche Tested
D
GDS
I-PAK
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
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Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQU4N50TU_WS
2.78
110
50
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FQU4N50TU_WS Rev. C1
1
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
V1G0GVSS
tp
DUT
VDD VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FQU4N50TU_WS Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FQU4N50TU_WS.PDF ] | |
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