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Numéro de référence | UPA2821T1L | ||
Description | MOS FIELD EFFECT TRANSISTOR | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
μPA2821T1L
MOS FIELD EFFECT TRANSISTOR
PreliminaryData Sheet
R07DS0753EJ0100
Rev.1.00
May 25, 2012
Description
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a
notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
• 4.5 V Gate-drive available
• Small surface mount package (8-pin HVSON (3333))
• Pb-free, Halogen Free
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2821T1L-E1-AT ∗1
Pure Sn (Tin)
Tape 3000 p/reel 8-pin HVSON (3333)
μPA2821T1L-E2-AT ∗1
typ. 0.028 g
Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Signal Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±26
±104
1.5
3.8
52
150
−55 to +150
18
32.4
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6
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Pages | Pages 8 | ||
Télécharger | [ UPA2821T1L ] |
No | Description détaillée | Fabricant |
UPA2821T1L | MOS FIELD EFFECT TRANSISTOR | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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