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PDF IRFH8321TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH8321TRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
4.9
6.8
19.4
25i
V
V
m
nC
A
Applications
Synchronous MOSFET for high frequency buck converters
IRFH8321PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
results in
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8321TRPBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Max imum Ratings
Pa ram ete r
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC (Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
ID M
PD @TA = 25°C
PD @TC (Bottom) = 25°C
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
± 20
21
17
83hi
52hi
25i
332
3.4
54
0.027
-55 to + 150
Units
V
A
W
W /°C
°C
Notes through are on page 9
1 www.irf.com © 2012 International Rectifier
August 3, 2012
1 page  
16
14 ID = 20A
12
10
8
TJ = 125°C
6
4
2 TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
100
10
IRFH8321PbF
400
ID
TOP 4.8A
300
8.9A
BOTTOM 20A
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
5 www.irf.com © 2012 International Rectifier
August 3, 2012
5 Page | ||
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| PDF Descargar | [ Datasheet IRFH8321TRPBF.PDF ] | |
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