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IRF7526D1PbF fiches techniques PDF

International Rectifier - MOSFET & Schottky Diode

Numéro de référence IRF7526D1PbF
Description MOSFET & Schottky Diode
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7526D1PbF fiche technique
PD -95437
IRF7526D1PbF
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l Micro8TM Footprint
l Lead-Free
Description
FETKY TM MOSFET & Schottky Diode
A1
A2
8K
7K
VDSS = -30V
S3
6 D RDS(on) = 0.20
G4
5D
Schottky Vf = 0.39V
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
Maximum
100
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD -1.2A, di/dt 160A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs – duty cycle 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
02/22/05

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