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PDF K3472 Data sheet ( Hoja de datos )
| Número de pieza | K3472 | |
| Descripción | MOSFET ( Transistor ) - 2SK3472 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3472
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3472
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 0.8 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
1
2
20
122
1
2
150
−55 to150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
125
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-03-04
1 page  
2SK3472
10
3
1
Duty = 0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
0.01
0.00001
0.0001
rth − tw
Single pulse
0.001
0.01
Pulse width tw (S)
0.1
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1
10
Safe operating area
30
10
3
ID max (pulsed) *
1 ID max (continuous)
DC operation
0.3 Tc = 25°C
100 µs *
1 ms *
0.1
*: Single nonrepetitive pulse
Tc = 25°C
00.3 Curves must be derated
linearly with increase in
temperature.
00.1
0.1 1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
150
120
90
60
30
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 203 mH
Wave form
ΕAS
=
1
2
⋅L ⋅I2
⋅
BVDSS
BVDSS − VDD
5 2002-03-04
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3472.PDF ] | |
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