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Renesas - High Speed Power Switching MOS FET

Numéro de référence RJK6011DJA
Description High Speed Power Switching MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK6011DJA fiche technique
RJK6011DJA
600V - 0.1A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C)
Low drive current
High density mounting
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
θch-a
Tch
Tstg
Preliminary Datasheet
R07DS0873EJ0200
Rev.2.00
Jan 28, 2014
D
1. Source
2. Drain
3. Gate
S
Ratings
600
±30
0.1
0.4
0.1
0.4
0.75
166.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0873EJ0200 Rev.2.00
Jan 28, 2014
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