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PDF FDME430NT Data sheet ( Hoja de datos )
| Número de pieza | FDME430NT | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2013
FDME430NT
N-Channel PowerTrench® MOSFET
30 V, 6 A, 40 mΩ
Features
General Description
Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A
Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A
Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
RoHS Compliant
This single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced PowerTrench® process to
optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
G
D
Pin 1 D
S
S
D
D
DD
DD
GS
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±12
6
30
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
60
175
°C/W
Device Marking
YA
Device
FDME430NT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDME430NT Rev.C3
1
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
FDME430NT Rev.C3
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDME430NT.PDF ] | |
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